Analog Circuits and Devices by Wai-Kai Chen

By Wai-Kai Chen

The foundations and alertness in Engineering sequence is a brand new sequence of handy, inexpensive references sharply fascinated about specific engineering issues and subspecialties. each one quantity during this sequence includes chapters rigorously chosen from CRC's bestselling handbooks, logically prepared for maximum comfort, and thoughtfully priced to slot each funds. Extracted from the best-selling VLSI guide, Analog Circuits and units presents a accomplished source overlaying the spectrum of units and their versions. as well as sensible discussions on amplifiers, circuits and filters, and compound semiconductor electronic built-in circuit expertise, it is also chapters on layout automation, layout languages, and algorithms and architectures

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17 For example, in the case of the square, we obtain four identical current sheets: the current sheets on opposite sides are parallel to one another, whereas the adjacent ones are orthogonal. Using symmetry and the fact that sheets with orthogonal current sheets have zero mutual inductance, the computation of the inductance is now reduced to evaluating the self-inductance of one sheet and the mutual inductance between opposite current sheets. 2. 60 A detailed derivation of these formulas can be found in Ref.

9). This configuration is suitable for both three- and four-terminal configurations. The main drawback is the high port-to-port capacitance, or equivalently a low self-resonant frequency. In some cases, such as narrowband impedance transformers, this capacitance may be incorporated as part of the resonant circuit. Also, in multi-level processes, the capacitance can be reduced by increasing the oxide thickness between spirals. For example, in a five-metal process, 50 to 70% reductions in port-to-port capacitance can be achieved by implementing the spirals on layers five and three instead of five and four.

Hence, the highest performance will always be obtained with passive inductors and capacitors. Unfortunately, standard integrated circuit technology has not evolved with a focus on providing good passive elements. This chapter describes the limited palette of options available, as well as means to make the most use out of what is available. 2 Fractal Capacitors Of capacitors, the most commonly used are parallel-plate and MOS structures. Because of the thin gate oxides now in use, capacitors made out of MOSFETs have the highest capacitance density of any standard IC option, with a typical value of approximately 7 fF/mm2 for a gate oxide thickness of 5 nm.

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