Applications and Devices Part B by R.K. Willardson and Albert C. Beer (Eds.)

By R.K. Willardson and Albert C. Beer (Eds.)

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Example text

The field rises within the hole bunch by lemmx. The field profile at this moment is shown in Fig. 25 as EL. 25. Schematic of field and current profiles in Read diode. The dashed line is the field at breakdown. 417 In the illustration in Fig. 25, it is depicted that E L ( x )bottoms at the trailing edge of the hole bunch. 3, or 100 kV/cm in the present case. When this bottoming takes place, holes do not move at the scattering-limited velocity any more. The hole distribution starts to collapse from the rear end.

The avalanche-region solution is the same as that in the preceding section. We know the values of electron and hole currents at the boundaries with the drift regions. When the injected particle current is known, the solution in the drift region is obtained from Eqs. (36)and (37). The small-signal admittance and Q are calculated according to the general procedure. By combining the equivalent circuit of the drift region in Fig. 15 with that of the avalanche region explained in the preceding section, we obtain a general equivalent circuit shown in Fig.

25, it is depicted that E L ( x )bottoms at the trailing edge of the hole bunch. 3, or 100 kV/cm in the present case. When this bottoming takes place, holes do not move at the scattering-limited velocity any more. The hole distribution starts to collapse from the rear end. As this tendency continues, at still higher amplitudes, the output power will not increase with amplitude as fast as formerly, and finally starts to decrease. Namely, this field bottoming is the onset of a saturation mechanism which eventually limits the oscillator power.

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